In this study, we proposed a rectifying drain electrode that was embedded in a p‐GaN gate AlGaN/GaN heterojunction field‐effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying drain electrode was implemented while using an embedded p‐GaN gating electrode that was placed in front of the ohmic drain electrode. The embedded p‐GaN gating electrode and the ohmic drain electrode are electrically shorted to each other.
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